SI8821EDB-T2-E1 Vishay Semiconductors MOSFET -30V 128mOhm@4.5V -2.3A P-Ch G-III
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| Producent | Vishay Semiconductors | | Part Number | SI8821EDB-T2-E1 (SI8821EDBT2E1) |
| Specifications | MOSFET -30V 128mOhm@4.5V -2.3A P-Ch G-III |
| Unit Price | 0,56 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 17 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 2.3 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 128 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 12 V Vgs th - Gate-Source Threshold Voltage: - 0.6 V to - 1.3 V Qg - Gate Charge: 5.2 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 900 mW Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 15 ns Forward Transconductance - Min: 4.8 S Minimum Operating Temperature: - 55 C Rise Time: 20 ns Series: SI8821EDB Factory Pack Quantity: 3000 Tradename: TrenchFET Power MOSFET Typical Turn-Off Delay Time: 40 ns |
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