SI8487DB-T1-E1 Vishay Semiconductors MOSFET -30V 31mOhm@10V 7.7A P-Ch G-III
| |
|
| Producent | Vishay Semiconductors | | Part Number | SI8487DB-T1-E1 (SI8487DBT1E1) |
| Specifications | MOSFET -30V 31mOhm@10V 7.7A P-Ch G-III |
| Unit Price | 0,63 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 7.7 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 31 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 12 V Qg - Gate Charge: 52 nC Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Configuration: Single Fall Time: 60 ns Forward Transconductance - Min: 16 S Rise Time: 10 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 290 ns Part # Aliases: SI8487DB-E1 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
