SI5504BDC-T1-GE3 Vishay Semiconductors MOSFET 30V 4/3.7A N/PCH
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| Producent | Vishay Semiconductors | | Part Number | SI5504BDC-T1-GE3 (SI5504BDCT1GE3) |
| Specifications | MOSFET 30V 4/3.7A N/PCH |
| Unit Price | 0,98 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 33 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 3.7 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 53 mOhms, 112 mOhms Transistor Polarity: N-Channel, P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 1.5 V to 3 V, - 1.5 V to - 3 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.5 W Mounting Style: SMD/SMT Package/Case: ChipFET-8 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Minimum Operating Temperature: - 55 C Series: SI5504BDC Factory Pack Quantity: 3000 Tradename: TrenchFET |
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