SIR864DP-T1-GE3 Vishay Semiconductors MOSFET 30V 40A N-CH MOSFET
| |
|
| Producent | Vishay Semiconductors | | Part Number | SIR864DP-T1-GE3 (SIR864DPT1GE3) |
| Specifications | MOSFET 30V 40A N-CH MOSFET |
| Unit Price | 0,72 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 17 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 40 A Vds - Drain-Source Breakdown Voltage: 30 v Rds On - Drain-Source Resistance: 3 mOhms Transistor Polarity: N-Channel Vgs th - Gate-Source Threshold Voltage: 1.2 V to 2.4 V Qg - Gate Charge: 43 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 54 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Brand: Vishay Semiconductors Configuration: Single Forward Transconductance - Min: 75 S Minimum Operating Temperature: - 55 C Series: SIRxxxDP Factory Pack Quantity: 3000 Part # Aliases: SIR864DP-GE3 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
