SISS27DN-T1-GE3 Vishay Semiconductors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
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| Producent | Vishay Semiconductors | | Part Number | SISS27DN-T1-GE3 (SISS27DNT1GE3) |
| Specifications | MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III |
| Unit Price | 0,92 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 33 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 50 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 5.6 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: - 1 V to - 2.2 V Qg - Gate Charge: 45 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 57 W Mounting Style: SMD/SMT Package/Case: PowerPAK-1212-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 20 ns Forward Transconductance - Min: 52 S Minimum Operating Temperature: - 55 C Rise Time: 45 ns Series: SISxxxDN Factory Pack Quantity: 3000 Tradename: TrenchFET Power MOSFET Typical Turn-Off Delay Time: 50 ns |
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