SI4936CDY-T1-GE3 Vishay Semiconductors MOSFET 30V 5.8A 2.3W 40mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SI4936CDY-T1-GE3 (SI4936CDYT1GE3) |
| Specifications | MOSFET 30V 5.8A 2.3W 40mohm @ 10V |
| Unit Price | 0,64 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 15 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 5 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 2.8 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.7 W Mounting Style: SMD/SMT Package/Case: SOIC-Narrow-8 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Dual Drain Fall Time: 13 ns Minimum Operating Temperature: - 55 C Rise Time: 13 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 16 ns Part # Aliases: SI4936CDY-GE3 |
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