SUP50N03-5M1P-GE3 Vishay Semiconductors MOSFET 30V 50A N-CH MOSFET
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| Producent | Vishay Semiconductors | | Part Number | SUP50N03-5M1P-GE3 (SUP50N035M1PGE3) |
| Specifications | MOSFET 30V 50A N-CH MOSFET |
| Unit Price | 1,61 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 33 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 50 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 4.2 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 2.5 V Qg - Gate Charge: 44 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 59.5 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Bulk Brand: Vishay Semiconductors Ciss - Input Capacitance: 2.78 nF Configuration: Single Fall Time: 9 ns Forward Transconductance - Min: 110 S Minimum Operating Temperature: - 55 C Rise Time: 9 ns Typical Turn-Off Delay Time: 35 ns |
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