SI8497DB-T2-E1 Vishay Semiconductors MOSFET -30V 53mOhm@4.5V 13A P-Ch G-III
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| Producent | Vishay Semiconductors | | Part Number | SI8497DB-T2-E1 (SI8497DBT2E1) |
| Specifications | MOSFET -30V 53mOhm@4.5V 13A P-Ch G-III |
| Unit Price | 0,71 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 26 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 13 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 53 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 12 V Qg - Gate Charge: 32.6 nC Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT Package/Case: MicroFoot-6 Packaging: Reel Configuration: Single Fall Time: 22 ns Forward Transconductance - Min: 10 S Rise Time: 10 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 75 ns |
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