SI6415DQ-T1-GE3 Vishay Semiconductors MOSFET 30V 6.5A 1.5W 19mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SI6415DQ-T1-GE3 (SI6415DQT1GE3) |
| Specifications | MOSFET 30V 6.5A 1.5W 19mohm @ 10V |
| Unit Price | 1,60 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 40 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 6.5 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 19 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.5 W Mounting Style: SMD/SMT Package/Case: TSSOP-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 17 ns Minimum Operating Temperature: - 55 C Rise Time: 17 ns Series: SI6415DQ Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 73 ns Part # Aliases: SI6415DQ-GE3 |
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