SI7625DN-T1-GE3 Vishay Semiconductors MOSFET -30V 7mOhm@10V 35A P-Ch G-III
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| Producent | Vishay Semiconductors | | Part Number | SI7625DN-T1-GE3 (SI7625DNT1GE3) |
| Specifications | MOSFET -30V 7mOhm@10V 35A P-Ch G-III |
| Unit Price | 1,07 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: - 3 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 7 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: - 2.5 V Qg - Gate Charge: 84.5 nC Maximum Operating Temperature: + 125 C Pd - Power Dissipation: 3.7 W Mounting Style: SMD/SMT Package/Case: PowerPAK-1212-8 Packaging: Reel Brand: Vishay Semiconductors Configuration: Single Forward Transconductance - Min: 47 S Minimum Operating Temperature: - 55 C Factory Pack Quantity: 3000 Part # Aliases: SI7625DN-GE3 |
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