SI4431BDY-T1-E3 Vishay Semiconductors MOSFET 30V (D-S) 7.5A

ProducentVishay Semiconductors
Part Number

SI4431BDY-T1-E3 (SI4431BDYT1E3)

Specifications

MOSFET 30V (D-S) 7.5A

Unit Price0,98 EUR
Minimum Order Quantity1
Tariff No.
Lead Time19 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 5.7 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 30 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.5 W Mounting Style: SMD/SMT Package/Case: SOIC-Narrow-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 47 ns Minimum Operating Temperature: - 55 C Rise Time: 10 ns Factory Pack Quantity: 2500 Tradename: TrenchFET Typical Turn-Off Delay Time: 70 ns Part # Aliases: SI4431BDY-E3
Datasheets
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