SI2318CDS-T1-GE3 Vishay Semiconductors MOSFET 40V 5.6A N-CH MOSFET
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| Producent | Vishay Semiconductors | | Part Number | SI2318CDS-T1-GE3 (SI2318CDST1GE3) |
| Specifications | MOSFET 40V 5.6A N-CH MOSFET |
| Unit Price | 0,50 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 5.6 A Vds - Drain-Source Breakdown Voltage: 40 V Rds On - Drain-Source Resistance: 35 mOhms Transistor Polarity: N-Channel Qg - Gate Charge: 5.8 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.1 W Mounting Style: SMD/SMT Package/Case: SOT-23-3 Packaging: Reel Configuration: Single Forward Transconductance - Min: 17 S Minimum Operating Temperature: - 55 C Factory Pack Quantity: 3000 Part # Aliases: SI2318CDS-GE3 |
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