SI7790DP-T1-GE3 Vishay Semiconductors MOSFET 40V 50A 69W 4.5mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SI7790DP-T1-GE3 (SI7790DPT1GE3) |
| Specifications | MOSFET 40V 50A 69W 4.5mohm @ 10V |
| Unit Price | 2,90 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 25.3 A Vds - Drain-Source Breakdown Voltage: 40 V Rds On - Drain-Source Resistance: 4.5 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 25 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 5.2 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Quad Drain Triple Source Fall Time: 28 ns Minimum Operating Temperature: - 55 C Rise Time: 34 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 45 ns Part # Aliases: SI7790DP-GE3 |
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