3N163-E3 Vishay Semiconductors MOSFET 40V 5mA 375mW

ProducentVishay Semiconductors
Part Number

3N163-E3 (3N163E3)

Specifications

MOSFET 40V 5mA 375mW

Unit Price20,84 EUR
Minimum Order Quantity1
Tariff No.
Lead Time13 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 50 mA Vds - Drain-Source Breakdown Voltage: - 40 V Rds On - Drain-Source Resistance: 250 Ohms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 375 mW Mounting Style: SMD/SMT Package/Case: TO-206AF-4 Packaging: Bulk Channel Mode: Enhancement Configuration: Single Minimum Operating Temperature: - 55 C Rise Time: 13 ns Factory Pack Quantity: 200 Typical Turn-Off Delay Time: 25 ns
Datasheets
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