3N163-E3 Vishay Semiconductors MOSFET 40V 5mA 375mW
| |
|
Producent | Vishay Semiconductors | Part Number | 3N163-E3 (3N163E3) |
Specifications | MOSFET 40V 5mA 375mW |
Unit Price | 20,84 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 13 weeks |
Weight and Dimension | |
Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 50 mA Vds - Drain-Source Breakdown Voltage: - 40 V Rds On - Drain-Source Resistance: 250 Ohms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 30 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 375 mW Mounting Style: SMD/SMT Package/Case: TO-206AF-4 Packaging: Bulk Channel Mode: Enhancement Configuration: Single Minimum Operating Temperature: - 55 C Rise Time: 13 ns Factory Pack Quantity: 200 Typical Turn-Off Delay Time: 25 ns |
Datasheets | |
E-shop Coming Soon
| |
E-shop Coming Soon
| |
Related Parts
| |
|