SI7938DP-T1-GE3 Vishay Semiconductors MOSFET 40V 60A 46W 5.8mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SI7938DP-T1-GE3 (SI7938DPT1GE3) |
| Specifications | MOSFET 40V 60A 46W 5.8mohm @ 10V |
| Unit Price | 1,40 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 19 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 60 A Vds - Drain-Source Breakdown Voltage: 40 V Rds On - Drain-Source Resistance: 5.8 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 46 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Fall Time: 15 ns Forward Transconductance - Min: 105 S Minimum Operating Temperature: - 55 C Rise Time: 19 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 40 ns Part # Aliases: SI7938DP-GE3 |
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