SIHF15N60E-GE3 Vishay Semiconductors MOSFET 600V 280mOhms@10V 15A N-Ch E-SRS
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| Producent | Vishay Semiconductors | | Part Number | SIHF15N60E-GE3 (SIHF15N60EGE3) |
| Specifications | MOSFET 600V 280mOhms@10V 15A N-Ch E-SRS |
| Unit Price | 2,78 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 15 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 280 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 39 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 34 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Bulk Channel Mode: Enhancement Ciss - Input Capacitance: 1.35 nF Configuration: Single Fall Time: 33 ns Forward Transconductance - Min: 4.6 S Minimum Operating Temperature: - 55 C Rise Time: 51 ns Series: E Tradename: E Series Typical Turn-Off Delay Time: 35 ns |
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