SiHB12N60E-GE3 Vishay Semiconductors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
| |
|
| Producent | Vishay Semiconductors | | Part Number | SiHB12N60E-GE3 (SIHB12N60EGE3) |
| Specifications | MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS |
| Unit Price | 1,92 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 12 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 380 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Qg - Gate Charge: 58 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 147 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Tube Configuration: Single Fall Time: 38 ns Forward Transconductance - Min: 3.8 S Minimum Operating Temperature: - 55 C Rise Time: 38 ns Series: E Factory Pack Quantity: 1000 Tradename: E Series Typical Turn-Off Delay Time: 35 ns |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
