SIHB33N60E-GE3 Vishay Semiconductors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
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| Producent | Vishay Semiconductors | | Part Number | SIHB33N60E-GE3 (SIHB33N60EGE3) |
| Specifications | MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS |
| Unit Price | 5,65 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 11 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 33 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 99 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 4 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 150 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 278 W Mounting Style: SMD/SMT Package/Case: D2PAK-3 Packaging: Tube Configuration: Single Fall Time: 80 ns Forward Transconductance - Min: 11 S Minimum Operating Temperature: - 55 C Rise Time: 90 ns Series: E Factory Pack Quantity: 1000 Tradename: E Series Typical Turn-Off Delay Time: 150 ns |
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