SI7478DP-T1-E3 Vishay Semiconductors MOSFET 60V 20A 5.4W 7.5mohm @ 10V

ProducentVishay Semiconductors
Part Number

SI7478DP-T1-E3 (SI7478DPT1E3)

Specifications

MOSFET 60V 20A 5.4W 7.5mohm @ 10V

Unit Price2,37 EUR
Minimum Order Quantity1
Tariff No.
Lead Time19 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 15 A Vds - Drain-Source Breakdown Voltage: 60 V Rds On - Drain-Source Resistance: 7.5 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 20 ns Minimum Operating Temperature: - 55 C Rise Time: 20 ns Series: SI74xxDx Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 115 ns Part # Aliases: SI7478DP-E3
Datasheets
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