SI4850EY-T1-GE3 Vishay Semiconductors MOSFET 60V 8.5A 3.3W 22mohm @ 10V
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| Producent | Vishay Semiconductors | | Part Number | SI4850EY-T1-GE3 (SI4850EYT1GE3) |
| Specifications | MOSFET 60V 8.5A 3.3W 22mohm @ 10V |
| Unit Price | 1,63 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 15 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 6 A Vds - Drain-Source Breakdown Voltage: 60 V Rds On - Drain-Source Resistance: 22 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.7 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 12 ns Minimum Operating Temperature: - 55 C Rise Time: 10 ns Factory Pack Quantity: 2500 Typical Turn-Off Delay Time: 25 ns Part # Aliases: SI4850EY-GE3 |
| Datasheets | |
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