SI8429DB-T1-E1 Vishay Semiconductors MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI8429DB-T1-E1 (SI8429DBT1E1) |
| Specifications | MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V |
| Unit Price | 1,10 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 16 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 7.8 A Vds - Drain-Source Breakdown Voltage: - 8 V Rds On - Drain-Source Resistance: 43 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 5 V Qg - Gate Charge: 21 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.77 W Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Channel Mode: Enhancement Configuration: Single Dual Drain Fall Time: 155 ns Forward Transconductance - Min: 0.7 S Minimum Operating Temperature: - 55 C Rise Time: 25 ns Factory Pack Quantity: 3000 Tradename: TrenchFET/MICRO FOOT Typical Turn-Off Delay Time: 260 ns Part # Aliases: SI8429DB-E1 |
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