SI3499DV-T1-GE3 Vishay Semiconductors MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI3499DV-T1-GE3 (SI3499DVT1GE3) |
| Specifications | MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V |
| Unit Price | 1,01 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 27 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 5.3 A Vds - Drain-Source Breakdown Voltage: - 8 V Rds On - Drain-Source Resistance: 23 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 5 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.1 W Mounting Style: SMD/SMT Package/Case: TSOP-6 Packaging: Reel Configuration: Single Minimum Operating Temperature: - 55 C Factory Pack Quantity: 3000 Part # Aliases: SI3499DV-GE3 |
| Datasheets | |
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