IRFBE30PBF Vishay Semiconductors MOSFET 800V Single N-Channel HEXFET
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| Producent | Vishay Semiconductors | | Part Number | IRFBE30PBF (IRFBE30PBF) |
| Specifications | MOSFET 800V Single N-Channel HEXFET |
| Unit Price | 1,52 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 4.1 A Vds - Drain-Source Breakdown Voltage: 800 V Rds On - Drain-Source Resistance: 3 Ohms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 30 ns Minimum Operating Temperature: - 55 C Rise Time: 33 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 82 ns |
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