SIR880ADP-T1-GE3 Vishay Semiconductors MOSFET 80V 6.3mOhm@10V 60A N-Ch MV T-FET

ProducentVishay Semiconductors
Part Number

SIR880ADP-T1-GE3 (SIR880ADPT1GE3)

Specifications

MOSFET 80V 6.3mOhm@10V 60A N-Ch MV T-FET

Unit Price1,77 EUR
Minimum Order Quantity1
Tariff No.
Lead Time20 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 60 A Vds - Drain-Source Breakdown Voltage: 80 V Rds On - Drain-Source Resistance: 6.3 mOhms Transistor Polarity: N-Channel Qg - Gate Charge: 24 nC Pd - Power Dissipation: 83 W Mounting Style: SMD/SMT Package/Case: SO-8 Packaging: Reel Channel Mode: Enhancement Configuration: Dual Series: SIRxxxADP Factory Pack Quantity: 3000 Tradename: ThunderFET TrenchFET Part # Aliases: SIR880ADP-GE3
Datasheets
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