SI8416DB-T2-E1 Vishay Semiconductors MOSFET 8V 16A 13W 23mOhms @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI8416DB-T2-E1 (SI8416DBT2E1) |
| Specifications | MOSFET 8V 16A 13W 23mOhms @ 4.5V |
| Unit Price | 0,77 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 14 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 16 A Vds - Drain-Source Breakdown Voltage: 8 V Rds On - Drain-Source Resistance: 23 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 0.8 V Vgs th - Gate-Source Threshold Voltage: 0.8 V Qg - Gate Charge: 26 nC Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT Package/Case: MicroFoot-6 Packaging: Reel Configuration: Single Fall Time: 20 ns Forward Transconductance - Min: 22 S Rise Time: 30 ns Factory Pack Quantity: 3000 Tradename: MICROFOOT TrenchFET Typical Turn-Off Delay Time: 80 ns |
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