SI8469DB-T2-E1 Vishay Semiconductors MOSFET 8V 4.6A 1.8W 64mOhms @ 4.5

ProducentVishay Semiconductors
Part Number

SI8469DB-T2-E1 (SI8469DBT2E1)

Specifications

MOSFET 8V 4.6A 1.8W 64mOhms @ 4.5

Unit Price0,54 EUR
Minimum Order Quantity1
Tariff No.
Lead Time16 weeks
Weight and Dimension
DescriptionVishay Product Category: MOSFET RoHS:  Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 4.6 A Vds - Drain-Source Breakdown Voltage: - 8 V Rds On - Drain-Source Resistance: 64 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 5 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.8 W Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Factory Pack Quantity: 3000
Datasheets
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