SI8466EDB-T2-E1 Vishay Semiconductors MOSFET 8V 5.4A 1.8W 43mOhms @ 4.5V
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Producent | Vishay Semiconductors | Part Number | SI8466EDB-T2-E1 (SI8466EDBT2E1) |
Specifications | MOSFET 8V 5.4A 1.8W 43mOhms @ 4.5V |
Unit Price | 0,54 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 26 weeks |
Weight and Dimension | |
Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 5.4 A Vds - Drain-Source Breakdown Voltage: 8 V Rds On - Drain-Source Resistance: 43 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 700 mV Vgs th - Gate-Source Threshold Voltage: 700 mV Qg - Gate Charge: 13 nC Pd - Power Dissipation: 1.8 W Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Configuration: Single Fall Time: 20 ns Forward Transconductance - Min: 30 S Rise Time: 30 ns Factory Pack Quantity: 3000 Tradename: MICROFOOT TrenchFET Typical Turn-Off Delay Time: 80 ns |
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