SI8439DB-T1-E1 Vishay Semiconductors MOSFET -8V 9.2A 2.7W 25mohm @ 4.5V
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| Producent | Vishay Semiconductors | | Part Number | SI8439DB-T1-E1 (SI8439DBT1E1) |
| Specifications | MOSFET -8V 9.2A 2.7W 25mohm @ 4.5V |
| Unit Price | 0,80 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 15 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: - 9.2 A Vds - Drain-Source Breakdown Voltage: - 8 V Rds On - Drain-Source Resistance: 25 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: - 800 mV Qg - Gate Charge: 33 nC Pd - Power Dissipation: 2.7 W Mounting Style: SMD/SMT Package/Case: MicroFoot-4 Packaging: Reel Configuration: Single Factory Pack Quantity: 3000 Part # Aliases: SI8439DB-E1 |
| Datasheets | |
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