IRL630PBF Vishay Semiconductors MOSFET N-Chan 200V 9.0 Amp
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| Producent | Vishay Semiconductors | | Part Number | IRL630PBF (IRL630PBF) |
| Specifications | MOSFET N-Chan 200V 9.0 Amp |
| Unit Price | 2,27 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 9 A Vds - Drain-Source Breakdown Voltage: 200 V Rds On - Drain-Source Resistance: 400 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 10 V Vgs th - Gate-Source Threshold Voltage: 1 V to 2 V Qg - Gate Charge: 40 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 74 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 33 ns Forward Transconductance - Min: 4.8 S Minimum Operating Temperature: - 55 C Rise Time: 57 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 38 ns |
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