SIA444DJT-T1-GE3 Vishay Semiconductors MOSFET N-Channel 30 V (D-S)
| |
|
| Producent | Vishay Semiconductors | | Part Number | SIA444DJT-T1-GE3 (SIA444DJTT1GE3) |
| Specifications | MOSFET N-Channel 30 V (D-S) |
| Unit Price | 0,68 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 11 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 12 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 17 mOhms Transistor Polarity: N-Channel Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 19 W Mounting Style: SMD/SMT Package/Case: PowerPAK-SC-70-6 Packaging: Reel Brand: Vishay Semiconductors Configuration: Single Forward Transconductance - Min: 24 S Series: SIA4xxDJ Factory Pack Quantity: 3000 Part # Aliases: SIA444DJT-GE3 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
