SIHP12N50C-E3 Vishay Semiconductors MOSFET N-Channel 500V
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| Producent | Vishay Semiconductors | | Part Number | SIHP12N50C-E3 (SIHP12N50CE3) |
| Specifications | MOSFET N-Channel 500V |
| Unit Price | 4,22 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 13 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 12 A Vds - Drain-Source Breakdown Voltage: 500 V Rds On - Drain-Source Resistance: 460 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 500 V Maximum Operating Temperature: + 125 C Pd - Power Dissipation: 208 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Reel Brand: Vishay Semiconductors Configuration: Single Forward Transconductance - Min: 3 S Minimum Operating Temperature: - 55 C Series: E Factory Pack Quantity: 1000 |
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