SiHG30N60E-E3 Vishay Semiconductors MOSFET N-Channel 600V
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| Producent | Vishay Semiconductors | | Part Number | SiHG30N60E-E3 (SIHG30N60EE3) |
| Specifications | MOSFET N-Channel 600V |
| Unit Price | 3,51 EUR |
| Minimum Order Quantity | 500 |
| Tariff No. | |
| Lead Time | 12 weeks |
| Weight and Dimension | |
| Description | Vishay Product Category: MOSFET RoHS: Details Brand: Vishay Semiconductors Id - Continuous Drain Current: 29 A Vds - Drain-Source Breakdown Voltage: 600 V Rds On - Drain-Source Resistance: 125 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Qg - Gate Charge: 85 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 250 W Mounting Style: Through Hole Package/Case: TO-247-3 Packaging: Tube Configuration: Single Forward Transconductance - Min: 5.4 S Minimum Operating Temperature: - 55 C Series: E Factory Pack Quantity: 25 Tradename: E Series |
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