TEMT1020 Vishay Semiconductors Phototransistors NPN Phototransistor

ProducentVishay Semiconductors
Part Number

TEMT1020 (TEMT1020)

Specifications

Phototransistors NPN Phototransistor

Unit Price0,24 EUR
Minimum Order Quantity1
Tariff No.8541408000
Lead Time15 weeks
Weight and Dimension
DescriptionVishay Product Category: Phototransistors Collector- Emitter Voltage VCEO Max: 70 V Collector-Emitter Breakdown Voltage: 70 V Collector-Emitter Saturation Voltage: 0.3 V Fall Time: 2.3 us Maximum Collector Current: 50 mA Maximum Dark Current: 200 nA Maximum On-State Collector Current: 100 mA Maximum Operating Temperature: + 85 C Maximum Power Dissipation: 100 mW Minimum Operating Temperature: - 40 C Package / Case: SMT-2 Packaging: Reel Product: Phototransistors Rise Time: 2 us Series: TEMT Standard Pack Qty: 1000 Type: IR Chip Wavelength: 880 nm
Datasheets
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