SI7960DP-T1-E3 VISHAY SILICONIX DUAL N CHANNEL MOSFET, 60V, SOIC
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Producent | VISHAY SILICONIX | Part Number | SI7960DP-T1-E3 (SI7960DPT1E3) |
Specifications | DUAL N CHANNEL MOSFET, 60V, SOIC |
Unit Price | 18,23 EUR |
Minimum Order Quantity | 1 |
Tariff No. | 85412900 |
Lead Time | 35 weeks |
Weight and Dimension | 0.001 Kg |
Description | Continuous Drain Current Id: 9.7A Drain Source Voltage Vds: 60V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.025ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.4W Rds(on) Test Voltage Vgs: 20V SVHC: To Be Advised Threshold Voltage Vgs: 3V Transistor Case Style: SOIC Transistor Polarity: N Channel |
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