SI7960DP-T1-E3 VISHAY SILICONIX DUAL N CHANNEL MOSFET, 60V, SOIC

ProducentVISHAY SILICONIX
Part Number

SI7960DP-T1-E3 (SI7960DPT1E3)

Specifications

DUAL N CHANNEL MOSFET, 60V, SOIC

Unit Price18,23 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time35 weeks
Weight and Dimension0.001 Kg
DescriptionContinuous Drain Current Id: 9.7A Drain Source Voltage Vds: 60V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.025ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.4W Rds(on) Test Voltage Vgs: 20V SVHC: To Be Advised Threshold Voltage Vgs: 3V Transistor Case Style: SOIC Transistor Polarity: N Channel
Datasheets
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