SI4916DY-T1-E3 VISHAY SILICONIX MOSFET 2N-CH 30V 10A 8-SOIC Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SO

ProducentVISHAY SILICONIX
Part Number

SI4916DY-T1-E3 (SI4916DYT1E3)

Specifications

MOSFET 2N-CH 30V 10A 8-SOIC Mosfet Array 2 N-Channel (Half Bridge) 30V 10A, 10.5A 3.3W, 3.5W Surface Mount 8-SO

Unit Price1,03 EUR
Minimum Order Quantity1
Tariff No.
Lead Time105 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Digi-Reel® Part Status Active FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A, 10.5A Rds On (Max) @ Id, Vgs 18 mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 3.3W, 3.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO
Datasheets
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