SI5902BDC-T1-GE3 VISHAY SILICONIX MOSFET, DUAL, N-CH, 30V, 4A, 1206-8
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| Producent | VISHAY SILICONIX | | Part Number | SI5902BDC-T1-GE3 (SI5902BDCT1GE3) |
| Specifications | MOSFET, DUAL, N-CH, 30V, 4A, 1206-8 |
| Unit Price | 4,81 EUR |
| Minimum Order Quantity | 150 |
| Tariff No. | 85411000 |
| Lead Time | |
| Weight and Dimension | 0.0003 Kg |
| Description | Continuous Drain Current Id: 4A Drain Source Voltage Vds: 30V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.053ohm Operating Temperature Max: 150°C Power Dissipation Pd: 3.12W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 3V Transistor Case Style: 1206 Transistor Polarity: Dual N Channel |
| Datasheets | |
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