SI4909DY-T1-GE3 VISHAY SILICONIX MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8

ProducentVISHAY SILICONIX
Part Number

SI4909DY-T1-GE3 (SI4909DYT1GE3)

Specifications

MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8

Unit Price15,27 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time16 weeks
Weight and Dimension0.0005 Kg
DescriptionContinuous Drain Current Id: -8A Drain Source Voltage Vds: -40V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.021ohm Operating Temperature Max: 150°C Power Dissipation Pd: 3.2W Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -1.2V Transistor Case Style: SOIC Transistor Polarity: P Channel
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
N6401Z187210West Instruments426,31 EUR
N6401Z187230West Instruments419,31 EUR
N6401Z187130West Instruments423,31 EUR
N6401Z188310West Instruments415,31 EUR
N6401Z188410West Instruments429,31 EUR
N6401Z188510West Instruments426,31 EUR
N6401Z188330West Instruments416,31 EUR
N6401Z188530West Instruments413,31 EUR
N6401Z188710West Instruments428,31 EUR
N6401Z188730West Instruments413,31 EUR
All Producents | VISHAY SILICONIX producent
© 2015 WorldHNews.com