IRFBG30PBF VISHAY SILICONIX MOSFET N-CH 1000V 3.1A TO-220AB N-Channel 1000V (1kV) 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
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| Producent | VISHAY SILICONIX | | Part Number | IRFBG30PBF (IRFBG30PBF) |
| Specifications | MOSFET N-CH 1000V 3.1A TO-220AB N-Channel 1000V (1kV) 3.1A (Tc) 125W (Tc) Through Hole TO-220AB |
| Unit Price | 1,80 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 77 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 5 Ohm @ 1.9A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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