SI4190DY-T1-GE3 VISHAY SILICONIX MOSFET N-CH 100V 20A 8-SOIC N-Channel 100V 20A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO
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| Producent | VISHAY SILICONIX | | Part Number | SI4190DY-T1-GE3 (SI4190DYT1GE3) |
| Specifications | MOSFET N-CH 100V 20A 8-SOIC N-Channel 100V 20A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO |
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| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 50V FET Feature - Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs 8.8 mOhm @ 15A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
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