SUD35N10-26P-GE3 VISHAY SILICONIX MOSFET N-CH 100V 35A DPAK N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak)
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| Producent | VISHAY SILICONIX | | Part Number | SUD35N10-26P-GE3 (SUD35N1026PGE3) |
| Specifications | MOSFET N-CH 100V 35A DPAK N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak) |
| Unit Price | 1,81 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Vgs(th) (Max) @ Id 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 12V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 8.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs 26 mOhm @ 12A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Datasheets | |
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