SIR878DP-T1-GE3 VISHAY SILICONIX MOSFET,N CH,DIODE,100V,40A,PPAKSO8

ProducentVISHAY SILICONIX
Part Number

SIR878DP-T1-GE3 (SIR878DPT1GE3)

Specifications

MOSFET,N CH,DIODE,100V,40A,PPAKSO8

Unit Price3,03 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time
Weight and Dimension0.002 Kg
DescriptionContinuous Drain Current Id: 40A Drain Source Voltage Vds: 100V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0114ohm Operating Temperature Max: 150°C Power Dissipation Pd: 5W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 1.2V Transistor Case Style: PowerPAK SO Transistor Polarity: N Channel
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
0311HA2JG2221SGEmerson Process Management
0311HA2JG2222CNEmerson Process Management
FDS8896FAIRCHILD SEMICONDUCTOR0,30 EUR
0311HA2JG2221P2Emerson Process Management
0311HA2JG3000ECEmerson Process Management
NTJD4158CT1GOn Semiconductor15,51 EUR
0311HA2JG3000CAEmerson Process Management
0311HA2JG3000P2Emerson Process Management
FDS8896.FAIRCHILD SEMICONDUCTOR1,34 EUR
0311HA2JG2222ECEmerson Process Management
All Producents | VISHAY SILICONIX producent
© 2015 WorldHNews.com