SUM60N10-17-E3 VISHAY SILICONIX MOSFET N-CH 100V 60A D2PAK N-Channel 100V 60A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D²Pak)

ProducentVISHAY SILICONIX
Part Number

SUM60N10-17-E3 (SUM60N1017E3)

Specifications

MOSFET N-CH 100V 60A D2PAK N-Channel 100V 60A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D²Pak)

Unit Price2,36 EUR
Minimum Order Quantity1
Tariff No.
Lead Time105 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3.75W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs 16.5 mOhm @ 30A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheets
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