SIS890DN-T1-GE3 VISHAY SILICONIX MOSFET, N-CH, 100V, PPAK-1212

ProducentVISHAY SILICONIX
Part Number

SIS890DN-T1-GE3 (SIS890DNT1GE3)

Specifications

MOSFET, N-CH, 100V, PPAK-1212

Unit Price14,91 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time20 weeks
Weight and Dimension0.0001 Kg
DescriptionContinuous Drain Current Id: 30A Drain Source Voltage Vds: 100V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0195ohm Operating Temperature Max: 150°C Power Dissipation Pd: 52W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 1.5V Transistor Case Style: PowerPAK 1212 Transistor Polarity: N Channel
Datasheets
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