SI7858ADP-T1-GE3 VISHAY SILICONIX MOSFET N-CH 12V 20A PPAK SO-8 N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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| Producent | VISHAY SILICONIX | | Part Number | SI7858ADP-T1-GE3 (SI7858ADPT1GE3) |
| Specifications | MOSFET N-CH 12V 20A PPAK SO-8 N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8 |
| Unit Price | 1,88 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 6V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1.9W (Ta) Rds On (Max) @ Id, Vgs 2.6 mOhm @ 29A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
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