SI4866BDY-T1-E3 VISHAY SILICONIX MOSFET N-CH 12V 21.5A 8-SOIC N-Channel 12V 21.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SO
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| Producent | VISHAY SILICONIX | | Part Number | SI4866BDY-T1-E3 (SI4866BDYT1E3) |
| Specifications | MOSFET N-CH 12V 21.5A 8-SOIC N-Channel 12V 21.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SO |
| Unit Price | 0,49 EUR |
| Minimum Order Quantity | 2.5 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 21.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 5020pF @ 6V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc) Rds On (Max) @ Id, Vgs 5.3 mOhm @ 12A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
| Datasheets | |
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