SIS452DN-T1-GE3 VISHAY SILICONIX MOSFET,N CH,DIODE,12V,35A,PPAK1212-8

ProducentVISHAY SILICONIX
Part Number

SIS452DN-T1-GE3 (SIS452DNT1GE3)

Specifications

MOSFET,N CH,DIODE,12V,35A,PPAK1212-8

Unit Price18,56 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time20 weeks
Weight and Dimension0.002 Kg
DescriptionContinuous Drain Current Id: 35A Drain Source Voltage Vds: 12V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0026ohm Operating Temperature Max: 150°C Power Dissipation Pd: 3.8W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 1.2V Transistor Case Style: PowerPAK 1212 Transistor Polarity: N Channel
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
ALQW2B0600Izumi18,40 EUR
HW1P10Izumi10,40 EUR
HW1S2LIzumi21,40 EUR
HW2LM1AIzumi8,40 EUR
LA1LA1C15VRIzumi20,40 EUR
LA1LA1C17VRIzumi13,40 EUR
LA1LA1C17VGIzumi15,40 EUR
LA1LA1C56GIzumi8,40 EUR
FDG8850NZ.FAIRCHILD SEMICONDUCTOR19,48 EUR
LA1LA1C57WIzumi23,40 EUR
All Producents | VISHAY SILICONIX producent
© 2015 WorldHNews.com