SIB488DK-T1-GE3 VISHAY SILICONIX MOSFET N-CH 12V 9A SC75-6 N-Channel 12V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single

ProducentVISHAY SILICONIX
Part Number

SIB488DK-T1-GE3 (SIB488DKT1GE3)

Specifications

MOSFET N-CH 12V 9A SC75-6 N-Channel 12V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single

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DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Discontinued at Digi-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 725pF @ 6V FET Feature - Power Dissipation (Max) 2.4W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs 20 mOhm @ 6.3A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-75-6L Single Package / Case PowerPAK® SC-75-6L
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