SIR872ADP-T1-GE3 VISHAY SILICONIX MOSFET N-CH 150V 53.7A PPAK SO-8 N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
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| Producent | VISHAY SILICONIX | | Part Number | SIR872ADP-T1-GE3 (SIR872ADPT1GE3) |
| Specifications | MOSFET N-CH 150V 53.7A PPAK SO-8 N-Channel 150V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8 |
| Unit Price | 1,75 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 105 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 53.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1286pF @ 75V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs 18 mOhm @ 20A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
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