SI3442BDV-T1-GE3 VISHAY SILICONIX MOSFET, N CH,2.5V,4.2A,DIODE,TSOP6

ProducentVISHAY SILICONIX
Part Number

SI3442BDV-T1-GE3 (SI3442BDVT1GE3)

Specifications

MOSFET, N CH,2.5V,4.2A,DIODE,TSOP6

Unit Price2,24 EUR
Minimum Order Quantity1
Tariff No.85412900
Lead Time17 weeks
Weight and Dimension0.0004 Kg
DescriptionContinuous Drain Current Id: 4.2A Drain Source Voltage Vds: 20V MSL: MSL 1 - Unlimited No. of Pins: 6 On Resistance Rds(on): 0.045ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.67W Rds(on) Test Voltage Vgs: 4.5V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 1.8V Transistor Case Style: TSOP Transistor Polarity: N Channel
Datasheets
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