IRF640STRRPBF VISHAY SILICONIX MOSFET N-CH 200V 18A D2PAK N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount TO-263 (D²Pak)
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| Producent | VISHAY SILICONIX | | Part Number | IRF640STRRPBF (IRF640STRRPBF) |
| Specifications | MOSFET N-CH 200V 18A D2PAK N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount TO-263 (D²Pak) |
| Unit Price | 2,74 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 77 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series - Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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